Technical specification for LL4147, LL4148, LL4448 diodes
 Maximum Exploitation Parameters  Electrical Parameters  Packing

Switching epitaxial planar semiconductor diodes

Type: LL4147, LL4148, LL4448
Body: minimelf (SOD-80)
Maximum Exploitation Parameters
Tamb=25°C

Measuring parameter

Unit

LL4147

LL4148

LL4448

Reverse voltage, UR

V

30

75

75

Pulse reverse voltage, URM

V

50

100

100

Storage temperature, Tstg

° Ñ

from -65 till +200

Working temperature of surround, Tamb

° Ñ

from -65 till +150
Electrical Characteristics
Tamb=25°C

Measuring unit

Test condition

LL4147

LL4148

LL4448

min

max

min

max

min

max
Forward voltage, U F1, V
IF1=10 mA
IF1=30 mA
IF1=100 mA
 
1
 
1
 
1
Reverse current, I R1, µA
UR1=30 V
UR1=75 V
5
5
5
Reverse breakdown voltage, UBR, V*
IR=100 µA
50
100
100
Reverce current, IR2, µA
UR2=20 V
T amb=150°Ñ
50
50
Restoration charge, Qr, pC
IF=10 mA
UR=10 V
400
200
200
Total capacitance, Ctot, pF
UR=0 V
F=1 MHz
6
4
4
* Note: tp / T = 0.01, tp = 0.3 ms
Packing
Packing in bulk (6000 pcs in one polyethylene packet)

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