Main  Products  Contacts  Ðóññêèé
Technical specification
 Typical dimentions  Electric parameters  Guarantee parameters

Chips for silicon switching diodes

Type: 1N4148 (chip size 0.28 õ 0.28 mm)
Typical dimentions

Diameter of wafer

76 mm, 100 mm
Sizes of chip
À
B
C
D

0.28 õ 0.28 mm
160 ±10 µm
25 ± 5 µm
140 ± 20 µm

Metallization of planar side

V - Ag

Contact electrod

Ag

Protective layer

SiO2 + Ta2O5

Metallization of nonplanar side

V - Ag

Width of scribing track
F
50 µm

Method of chip splitting

Laser cutting with mechanical breaking
Electric parameters*
Tamb=25°C
Measuring parameter Unit Min. Max. Test condition
Reverse current, IR nÀ
µÀ		   23
1,5
 UR = 20 V
UR = 75 V
Reverse Breakdown woltage, UBR V 105   IR=100 µÀ
Forward voltage, UF V   1,05 IF=30 mA  
*Note. Electric parameters are measured on the wafer. Measuring on splitted chips is not made.
Guarantee parameters*
Tamb=25°C
Measuring parameter Unit Min. Max. Test conditions

Reverse current,
IR1,
IR2
nÀ
µÀ
  
25
5
UR=20 V
UR=75 V
Forward voltage UF V   1,0 IF = 10 mÀ
Rewerse Breakdown voltage, UBR V 100   IR=100 µÀ
Total capacitance of diodetot pF   4 UR =0 V, f = 1 MHz
Reverse recovery time, tRR ns   4 IF=10 mÀ to IR=50 mÀ,
RL = 100 W measured to
IR = 1 mÀ
Power of dissipation mW   500  
Operation junktion temperature °C   200  
Storage temperature °C -65 200  
*Note. Guarantee parameters are to the chips that are sealed hermetically in DO-35. Yiela guarantee in according with electro parameters is not less 90%.
Requirementrs to chips' outward.
  1. Formation of roughness on the cutting line because of origin of silicon mechanical damages is allowed. Silicon mechanical damages spread in the limis of width of scribing tracks.
  2. Not allowed:
    2.1. Absence of electrode;
    2.2. Mechanical damages that penetrade into safeguard zone;
    2.3. Bond liftoff of metallization on non planar side more than 1/4 area of chip;
    2.4. Separate depression on silver electrodes with diameter more than 1/3 of electrode diameter and depth more than 1/3 of electrode height;
    2.5. False putting of silver on chip area.
Note. Control of chip outward is made by visual inspection (p.1) and microscope when increase is 16x (p.2). Yield guarantee in accordance with chip outward is not less 99 %.

Our address

UE "Tsvetotron plant"
11 Kariernaya Street
Brest, 224022, Republic of Belarus
phone: +375 (0)162 43-48-03, fax: +375 (0)162 43-32-58
E-mail: tsvetotron