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Technical Specification for BAV 17, BAV 18, BAV 19, BAV 20, BAV 21 diodes |
| Maximum Exploitation Parameters |
Electrical Parameters
|
Packing
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| Signalling epitaxial planar diodes
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| Type: BAV 17, BAV 18, BAV 19, BAV 20, BAV 21 |
| Body: DO-35 |
 |
l1 – lead lenght is not controlled and not fitted for mounting.
| l, mm |
H, mm |
Note |
| 28±2 |
63,8 max |
|
| 29,3 min |
62,78±0,6 |
For automated assembling of apparatus |
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Maximum Exploitation Parameters |
Tamb=25°C
| Measuring parameter |
Unit |
Value |
Reverse voltage,
UR
BAV 17
BAV 18
BAV 19
BAV 20
BAV 21
|
V |
20
50
100
150
200
|
Forward current, IF
from -65°C till +25°C,
at +125°C
|
mA mA
|
250
50
|
Storage temperature, T stg |
°C |
from –65 till +175 |
Working temperature of surround, Tamb |
°C |
from –65 till +125 |
|
|
Electrical Parameters |
Tamb=25°C
| Measuring parameter |
Test conditions |
Value |
| min |
max |
| Forward
voltage, UF1, V |
IF=100mA |
|
1.0 |
| Reverce
current, IR1, nA
BAV 17
BAV 18
BAV 19
BAV 20
BAV 21
|
UR1= 20 V
UR1= 50 V
UR1=100 V
UR1=150 V
UR1=200 V |
|
100
100
100
100
100 |
| Reverce current
at Tamb=100°C, IR2,µA
BAV 17
BAV 18
BAV 19
BAV 20
BAV 21
|
UR2= 20 V
UR2= 50 V
UR2=100 V
UR2=150 V
UR2=200 V |
|
15
15
15
15
15 |
|
Restoration
charge, Qr, pC |
IF=10
mA
URM=10 V |
|
600 |
|
Total capacitance, Ctot, pF |
UR=0 V
f=1MHz |
|
5 |
| Reverce
breakdown voltage, U(BR), V
BAV 17
BAV 18
BAV 19
BAV 20
BAV 21
|
I R= 100 µA, t p / T = 0.01,
tp = 0.3 ms
|
25
60
120
200
250
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Packing |
- Packing in bulk (500 pcs in one polyethylene packet).
- Packing in sticky tape.
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Our
address |
UE "Tsvetotron plant"
11 Kariernaya Street
Brest, 224022, Republic of Belarus
phone: +375 (0)162 43-48-03, fax: +375 (0)162 43-32-58
E-mail: tsvetotron
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