Technical specification for 1N60, 1N60P diodes
 Maximum Exploitation Parameters  Electrical Parameters  Packing

Shottky Barrier Switching Diodes

Type: 1N60, 1N60P
Body: DO-35
l1 – lead length is not controlled and not fitted for mounting.
l, mm H, mm Note
28±2 63,8 max  
29,3 min 62,78±0,6 For automated assembling of apparatus
Maximum Ezploitation Parameters
Tamb=25°C
Measuring parameter Unit 1N60 1N60P
Forward voltage, VR V 40 45
Repetitive peak forward current, IFRM mA 150 500
Storage temperature, Òstg °C from –60 till +100 from –60 till +100
Electrical parameters
Tamb=25°C
Measuring parameter Test conditions 1N60 1N60P
type max type max
Forward voltage,UF1, V
IF1=1mA
IF1=30mA
IF1=200mA		   0.34
0.7		 - 0.32

1.0

Reverse current, IR1, uÀ

 UR=15V   0.5 - 1.0
Reverse recovery time, t rr , ns
 IF=IR=10mA
iR=1mA
RL=100 W 		  3 - 5
Total capacitance, Ctot, pF
 UR=10V
f=1MHz 		  6 - 6
Packing
  1. Packing in bulk (500 pcs in one polyethylene packet).
  2. Packing in sticky tape.

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Brest, 224022, Republic of Belarus
phone: +375 (0)162 43-48-03, fax: +375 (0)162 43-32-58
E-mail: tsvetotron