Technical specification for 1N5720 diodes
 Maximum Exploitation Parameters  Electrical Parameters  Packing

Switching epitaxial planar semiconductor diodes

Type: 1N5720
Body: DO-35
l1 - lead length is not controlled and not fitted for mounting.
l, mm
H, mm
Note
28±2
63,8 max
  
29,3 min
62,78±0,6
For automated assembling of apparatus
Maximum Exploitation Parameters
Tamb=25°C
Measuring parameter
Unit
Value
Reverse voltage, UR
V
30
Pulse reverse voltage, URM
V
50
Storage temperature, Tstg
°C
from –65 till +200
Working temperature of surround, Tamb
°C
from –65 till +150
Electrical Parameters
Tamb=25°C
Measuring parameter
Test conditions
Value
min
max
Forward voltage, UF1, V
IF1=50 mA
  
1,0
Reverse current, IR1, µA
UR1=30 V
  
0,5
Reverse breakdown voltage, UBR, V*
IR=100 µA
50
  
Restoration charge, Qr, pC
IF=10 mA
UR=10 V
  
400
Total capacitance, Ctot, pF
UR=0 V
f=1MHz
  
6
* Note: tp / T = 0.01, tp = 0.3 ms
Packing
  1. Packing in bulk (500 pcs in one polyethylene packet).
  2. Packing in sticky tape.

Our address

UE "Tsvetotron plant"
11 Kariernaya Street
Brest, 224022, Republic of Belarus
phone: +375 (0)162 43-48-03, fax: +375 (0)162 43-32-58
E-mail: tsvetotron